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The IRG4PSC71UDPBF is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter voltage of 600 V and a continuous collector current of 85 A at 25°C. The device operates within a temperature range of -55°C to +175°C, with a maximum power dissipation of 350 W. It utilizes the SUPER-247™ (TO-274AA) through-hole package. Key electrical parameters include a saturation voltage of 2.3 V and gate-emitter limits of ±20 V.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for End-of-Life notifications, as discontinuation notices may affect long-term supply chain stability. Ensure storage conditions meet semiconductor handling standards to prevent degradation prior to assembly.
Select this component when a 600 V rating and 85 A current capacity are required for through-hole applications. Consider the specific switching frequency requirements, as the UltraFast variant supports up to 60 kHz. Evaluate thermal management needs against the 350 W dissipation limit and ensure the PCB layout accommodates the SUPER-247™ footprint.
This IGBT belongs to Infineon’s SUPER-247™ family, designed for high-power density applications. It complements other devices in the PSC series, offering a balance of low conduction losses and fast switching speeds suitable for demanding industrial and consumer electronics environments requiring reliable through-hole integration.
The IRG4PSC71KPBF is a documented substitute part number within the same product line. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference datasheets to ensure equivalent electrical ratings and package dimensions match the original design requirements.