IRG4PSH71UD

IRG4PSH71UD

  • Description:IGBT 1200V 99A SUPER-247
  • Series:-

SKU:99f22f019afb Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT 1200V 99A SUPER-247
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bag
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):99 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 70A
  • Power - Max:350 W
  • Switching Energy:8.8mJ (on), 9.4mJ (off)
  • Input Type:Standard
  • Gate Charge:380 nC
  • Td (on/off) @ 25°C:46ns/250ns
  • Test Condition:960V, 70A, 5Ohm, 15V
  • Reverse Recovery Time (trr):110 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-274AA
  • Supplier Device Package:SUPER-247™ (TO-274AA)
  • Grade:-
  • Qualification:-

Download product information

IRG4PSH71UD

Overview

The IRG4PSH71UD is a Generation 4 UltraFast Copack IGBT featuring an integrated HEXFRED antiparallel diode. It utilizes the Super-247 package to provide higher power handling and increased creepage distance compared to standard TO-247 packages. The device supports operating frequencies from 8 to 40 kHz in hard switching and up to 200 kHz in resonant mode soft switching. Key electrical parameters include a collector-emitter voltage of 1200 V, a continuous collector current of 99 A at 25°C case temperature, and a typical saturation voltage of 2.52 V at 15 V gate drive and 50 A collector current.

Feature Summary

  • Generation 4 IGBT design ensures tighter parameter distribution and optimized efficiency with minimized switching and conduction losses.
  • Integrated HEXFRED antiparallel diode reduces overall switching losses and electromagnetic interference (EMI).
  • Super-247 package offers industry-benchmark power density, doubling the power handling capability of the same footprint TO-247 while requiring less space than TO-264.

Applications

  • High-frequency hard switching applications operating between 8 and 40 kHz.
  • Resonant mode soft switching circuits requiring operation up to 200 kHz.
  • Designs requiring multiple paralleled IGBTs for cost and space optimization.

Procurement Notes

Verify the specific ordering suffix when purchasing. The provided datasheet references the IRG4PSH71UDPbF variant, which indicates lead-free construction. Confirm that the component matches the required package type and terminal configuration before integration into the final assembly.

Selection Notes

Select this component for designs prioritizing high power density and reduced footprint relative to traditional TO-247 packages. The Super-247 package provides enhanced thermal performance and a larger creepage distance. Ensure the gate drive circuitry accommodates the specified total gate charge and threshold voltage characteristics for reliable switching.

Part Context

This component belongs to Infineon's Generation 4 UltraFast IGBT family. It is designed as a copack solution, integrating the IGBT die with a fast-recovery antiparallel diode. The product line targets applications demanding high efficiency and compact form factors in power conversion systems.

Replacement Considerations

Direct replacement requires verifying pinout compatibility and thermal interface dimensions. The Super-247 package differs physically from standard TO-247; ensure the PCB layout and heatsink mounting accommodate the specific case outline and recommended clip force specifications.

IRG4PSH71UDIRG4PSH71UD

Click on the inquiry