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The IRG4RC10K is a short-circuit rated UltraFast Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an integrated ultrafast soft recovery diode and is designed for high-speed switching applications. The device operates with a collector-emitter voltage of 600V and supports a continuous collector current of 5.0A at 25°C. Typical saturation voltage is 2.39V at Vge=15V.
Verify the exact suffix against official datasheets, as variations may indicate different packaging or tape-and-reel configurations. Confirm RoHS compliance status and lead-free designation through current manufacturer documentation before procurement.
Select this component for circuits requiring robust short-circuit protection and fast reverse recovery characteristics. Ensure gate drive voltages align with the specified 15V operating condition to maintain optimal performance and thermal stability.
This IGBT belongs to the UltraFast series from International Rectifier, now part of Infineon. It is engineered for efficiency in power conversion systems where rapid switching and diode recovery are critical for minimizing losses and electromagnetic interference.
Check for equivalents like IRG4PH30KPBF or IRGPC40KD2 for similar IGBT specifications. Verify pin compatibility and thermal requirements when substituting with other short-circuit rated devices.