IRG4RC10KDTRPBF

$1.77

Description：IGBT 600V 9A TO-252AA
Series：-

SKU:2787da9a4f33 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 9A TO-252AA
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：9:00 AM
Current - Collector Pulsed (Icm)：18 A
Vce(on) (Max) @ Vge, Ic：2.62V @ 15V, 5A
Power - Max：38 W
Switching Energy：250µJ (on), 140µJ (off)
Input Type：Standard
Gate Charge：19 nC
Td (on/off) @ 25°C：49ns/97ns
Test Condition：480V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr)：28 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252AA (DPAK)
Grade：-
Qualification：-

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IRG4RC10KDTRPBF

Overview

The IRG4RC10KDTRPBF is a Generation 4 N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft-recovery diode. It features a maximum collector-to-emitter voltage of 600 V and a continuous collector current of 9.0 A at 25°C case temperature. The device supports a pulsed collector current of 18 A and is short-circuit rated for 10 µs at 125°C. It utilizes the TO-252AA surface-mount package.

Feature Summary

Generation 4 IGBT design providing tighter parameter distribution and higher efficiency
Short circuit rated to withstand 10 µs at 125°C junction temperature
Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes

Applications

High operating frequency motor controls above 5.0 kHz
Bridge configurations requiring optimized switching performance
Power density applications minimizing noise and EMI

Procurement Notes

Verify the specific ordering suffix TRPBF indicates tape-and-reel packaging when sourcing components. Confirm that the manufacturer designation aligns with Infineon Technologies or International Rectifier legacy documentation. Ensure compliance with lead-free specifications as indicated in the datasheet markings.

Selection Notes

Select this component for designs requiring robust short-circuit protection up to 10 µs. The integrated HEXFRED diode reduces reverse recovery losses compared to discrete solutions. Evaluate thermal management requirements based on the specified junction-to-case resistance values for the intended load current and ambient conditions.

Part Context

This part belongs to the IRG4RC series of surface-mountable IGBTs. It represents an evolution from previous generations by offering improved efficiency and tighter parameter distributions. The integration of the anti-parallel diode simplifies bridge circuit layouts while maintaining high-frequency operation capabilities.