SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRG4RC10SPbF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter voltage rating of 600 V and a continuous collector current capacity of 14 A at 25°C. The device utilizes a DPAK surface-mount package with an isolated tab for thermal management. Key electrical characteristics include a maximum collector-emitter saturation voltage of 1.8 V at 8 A, a gate charge of 15 nC, and a turn-off time of 630 ns. It operates within a junction temperature range of -55°C to +150°C.
Verify the component authenticity against official Infineon documentation before integration. Confirm that the specific ordering suffix matches the required package and lead-free specifications. Ensure compatibility with existing thermal management designs due to the DPAK form factor. Check for any regional compliance requirements relevant to the final assembly environment.
Select this component for applications requiring robust performance in medium-power switching environments. The 600V rating suits general-purpose industrial and consumer electronics. Consider the thermal resistance characteristics when designing the PCB layout. Evaluate the trade-off between conduction losses and switching speeds inherent to Generation 4 technology.
This part belongs to the IRG4BC/RC series of Generation 4 IGBTs from Infineon. These devices are engineered to replace older generation components in various power conversion topologies. The series is known for balancing low conduction voltage with fast switching capabilities, making it a standard choice for mid-range power applications.
Public confirmed substitute part numbers: IKA15N60TXKSA1.