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Product Detailed Parameters
- Description：IGBT 600V 14A TO-252AA
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 8A
- Power - Max：38 W
- Switching Energy：140µJ (on), 2.58mJ (off)
- Input Type：Standard
- Gate Charge：15 nC
- Td (on/off) @ 25°C：25ns/630ns
- Test Condition：480V, 8A, 100Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA (DPAK)
- Grade：-
- Qualification：-
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Overview
The IRG4RC10STR is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a 600 V collector-emitter voltage rating and operates in surface-mount TO-252AA packages. The device supports continuous collector currents up to 14 A with a saturation voltage of approximately 2.3 V at rated conditions. Switching characteristics include turn-on energy of 140 µJ and turn-off energy of 2.58 mJ under standard test conditions of 480 V, 8 A, and 15 V gate drive.
Feature Summary
- Single IGBT configuration designed for efficient power switching applications
- Surface-mount TO-252AA package facilitates automated PCB assembly
- Optimized switching energy parameters for balanced performance
Applications
- Motor control drives
- Power supply inverters
- Industrial automation systems
Procurement Notes
Verify the specific ordering suffix and tape-and-reel packaging requirements against official Infineon documentation before procurement. Confirm RoHS compliance status and environmental declarations via the manufacturer's product catalog. Ensure that the selected variant matches the required thermal management specifications for the intended application environment.
Selection Notes
Select this component based on its 600 V blocking capability and 14 A current handling within a compact surface-mount form factor. Evaluate the trade-off between switching losses and conduction voltage drop relative to system efficiency targets. Consider the thermal resistance characteristics inherent to the TO-252AA package for adequate heat dissipation design.
Part Context
This IGBT belongs to Infineon’s discrete power transistor portfolio, targeting medium-power conversion tasks. It complements complementary diodes and MOSFETs within the company’s broader semiconductor solutions for energy-efficient electronics and industrial power infrastructure.
Replacement Considerations
Consult official cross-reference lists for direct substitutes. Verify pin compatibility and electrical parameter equivalence if considering alternative manufacturers.
