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Product Detailed Parameters
- Description：IGBT 600V 14A TO-252AA
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 8A
- Power - Max：38 W
- Switching Energy：140µJ (on), 2.58mJ (off)
- Input Type：Standard
- Gate Charge：15 nC
- Td (on/off) @ 25°C：25ns/630ns
- Test Condition：480V, 8A, 100Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA (DPAK)
- Grade：-
- Qualification：-
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Overview
The IRG4RC10STRL is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600V and a maximum continuous collector current of 14A. The device is housed in a DPAK surface-mount package, designed for efficient thermal management with a power dissipation rating of 38W. This component belongs to the fast IGBT category, optimized for switching frequencies up to 8-10kHz.
Feature Summary
- Single-channel IGBT configuration for discrete switching applications
- Surface-mount DPAK package design for compact PCB integration
- Optimized for high-speed switching operations within specified frequency ranges
Applications
- Motor control systems requiring discrete switching elements
- Power supply units utilizing single-phase topologies
- Industrial inverters operating at medium power levels
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and variant selection. Confirm that the DPAK package type aligns with your board layout requirements. Check for any recent lifecycle status updates or alternative recommendations from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component when a 600V blocking capability and 14A continuous current handling are required in a surface-mount format. Ensure the application's thermal design can accommodate the 38W power dissipation rating. Verify that the switching speed characteristics meet the system's efficiency targets without exceeding safe operating area limits.
Part Context
This part is part of Infineon's discrete semiconductor portfolio, specifically targeting applications needing reliable IGBT solutions in standard packages. It represents a legacy product line often used in established designs where DPAK form factors are preferred over newer module technologies.
Replacement Considerations
Consult official Infineon substitution guides for direct replacements. Consider newer generations of IGBTs if improved switching performance or different packaging options are needed for updated designs.
