IRG4RC10STRRPBF

Overview

The IRG4RC10SPbF is a 1200V CoolMOS™ P7 IGBT in a TO-263 package. It features a 10A collector current and low saturation voltage of 1.8V at 15A. The device offers fast switching with a turn-off time of 100ns and includes an integrated anti-parallel diode with a reverse recovery time of 150ns. Designed for high efficiency, it supports junction temperatures up to 175°C.

Feature Summary

• Integrates a fast-recovery anti-parallel diode within the same package
• Utilizes CoolMOS™ P7 technology for optimized switching performance
• Provides robust thermal management capabilities for high-power applications

Applications

• High-frequency motor drives
• Switch-mode power supplies
• Induction heating systems

Procurement Notes

Verify the exact part number suffix against official Infineon documentation to ensure correct packaging and lead-free compliance. Confirm that the TO-263 outline dimensions match your PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high voltage blocking capability combined with low conduction losses. Ensure gate drive circuits are compatible with the specified switching times and that thermal resistance values align with the system's heat dissipation strategy.

Part Context

This IGBT belongs to the CoolMOS™ family, representing advanced silicon technology for power switching. It is designed to replace older generation devices by offering improved efficiency and reduced electromagnetic interference in compact power electronics modules.

Replacement Considerations

Check for direct pin-compatible alternatives within the same CoolMOS™ series. Verify that any substitute maintains identical voltage ratings, current capacity, and package dimensions to ensure seamless integration without redesigning the host circuit board.