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Product Detailed Parameters
- Description：IGBT 600V 8.5A TO-252AA
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：8.5 A
- Current - Collector Pulsed (Icm)：34 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 5A
- Power - Max：38 W
- Switching Energy：140µJ (on), 120µJ (off)
- Input Type：Standard
- Gate Charge：15 nC
- Td (on/off) @ 25°C：40ns/87ns
- Test Condition：480V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：28 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA (DPAK)
- Grade：-
- Qualification：-
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Overview
The IRG4RC10UDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 10 A at 25 °C. The device utilizes a TO-220FP-3 through-hole package with an isolated tab for mounting. Key electrical characteristics include a collector-emitter saturation voltage of 2.61 V and a power dissipation rating of 25 W. It operates within a temperature range of -55 °C to +150 °C junction temperature.
Feature Summary
- Single IGBT configuration designed for high-speed switching applications
- Integrated anti-parallel fast recovery diode for inductive load commutation
- Through-hole mounting via TO-220FP-3 package with insulated tab
Applications
- High-frequency motor drives and inverters
- Switched-mode power supplies (SMPS)
- DC-AC and DC-DC converters
Procurement Notes
Verify the specific suffix 'UDPBF' against official Infineon documentation to confirm pinout, thermal resistance, and RoHS compliance status. Confirm availability as distribution channels may list obsolete or end-of-life stock. Ensure the procurement source provides valid traceability documents matching the manufacturer's part identification.
Selection Notes
Select this component for circuits requiring 600 V blocking capability with moderate current handling up to 10 A. The integrated diode simplifies designs involving inductive loads. Evaluate thermal management requirements based on the 25 W dissipation limit and ensure the gate drive voltage remains within the specified ±20 V range for reliable operation.
Part Context
This part belongs to Infineon's IRG4 series of IGBTs, which are optimized for medium-power applications. The series typically combines low conduction losses with fast switching speeds. The TO-220FP-3 package allows for efficient heat sinking while maintaining electrical isolation between the collector and the mounting surface.
Replacement Considerations
Cross-reference with other Infineon IRG4 series parts such as IRG4BC10UDPBF or IRG4PC10UDPBF for similar specifications. Verify that any substitute maintains the same voltage, current ratings, and package footprint before integration into existing designs.
