IRG6B330UDPBF

$2.01

Description：IGBT TRENCH 330V 70A TO-220AB
Series：-

SKU:f568ee17f5ba Category: Single IGBTs Brand: International Rectifier

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 330V 70A TO-220AB
Series：-
Mfr：International Rectifier
Package：Bulk
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：330 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.76V @ 15V, 120A
Power - Max：160 W
Switching Energy：-
Input Type：Standard
Gate Charge：85 nC
Td (on/off) @ 25°C：47ns/176ns
Test Condition：196V, 25A, 10Ohm
Reverse Recovery Time (trr)：60 ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRG6B330UDPBF

Overview

The IRG6B330UDPBF is a trench IGBT with an integrated antiparallel diode, designed for Plasma Display Panel (PDP) applications. It features a 330V collector-emitter breakdown voltage and operates up to a 150°C junction temperature. The device utilizes advanced trench technology to achieve low VCE(on) and low EPULSE rating per silicon area, improving panel efficiency. Key electrical parameters include a typical VCE(on) of 1.69V at IC=70A and TJ=150°C, and a repetitive peak current capability of 250A at TC=25°C.

Feature Summary

Advanced trench IGBT technology optimized for sustain and energy recovery circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSE) ratings for improved panel efficiency
High repetitive peak current capability
Lead-free package construction

Applications

Plasma Display Panels (PDP)
Sustain circuits in PDP applications
Energy recovery circuits in PDP applications

Procurement Notes

Verify the component matches the exact part number IRG6B330UDPBF. Confirm the package type is TO-220AB. Ensure the supplier provides documentation confirming lead-free compliance as specified in the datasheet. Check for any specific handling requirements related to the high repetitive peak current capability during installation.

Selection Notes

Select this component when designing for Plasma Display Panel systems requiring robust performance at elevated temperatures. The 330V rating and high peak current make it suitable for specific PDP sustain and energy recovery topologies. Consider the thermal resistance characteristics and the 150°C maximum junction temperature limit for heat sink design.

Part Context

This IGBT belongs to International Rectifier's portfolio of power semiconductors tailored for display technologies. It represents a specialized solution leveraging trench gate technology to address the specific efficiency and reliability demands of plasma display manufacturing, distinguishing it from general-purpose switching devices.