IRG7CH35UED

Description：IGBT 1200V ULTRA FAST DIE
Series：-

SKU:d6ea41f23553 Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT 1200V ULTRA FAST DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Download product information

IRG7CH35UED

Overview

The IRG7CH35UED is a high-voltage IGBT module manufactured by Infineon Technologies, designed for demanding power conversion applications. It features a 1200 V collector-emitter voltage rating and an ultra-fast die structure optimized for high-frequency switching operations. The component is supplied in a lead-free configuration compliant with RoHS standards. This specific part number represents the discrete semiconductor die element intended for integration into larger power modules or custom assembly solutions rather than a pre-packaged standalone unit.

Feature Summary

Ultra-fast die architecture engineered to minimize switching losses during high-frequency operation
High voltage tolerance rated at 1200 V for robust performance in industrial power systems
Lead-free construction ensuring compliance with environmental safety regulations

Applications

Industrial motor drive inverters
High-frequency power supply topologies
Uninterruptible power system (UPS) modules

Procurement Notes

Verify that the procurement channel provides official documentation confirming the component is a bare die rather than a packaged module. Ensure storage conditions meet specified humidity and temperature limits to prevent degradation of the semiconductor surface prior to assembly. Confirm that the supplier can provide traceability records consistent with automotive or industrial quality standards required for your specific application environment.

Selection Notes

Select this component when designing custom power stages requiring a 1200 V rating with fast switching characteristics. Evaluate thermal management requirements carefully as the bare die lacks integrated packaging heat spreaders. Compare against other ultra-fast variants within the Infineon portfolio to ensure the specific electrical parameters align with the target circuit's voltage and current stress levels.

Part Context

This component belongs to Infineon's broader portfolio of insulated gate bipolar transistors. It serves as a fundamental building block for constructing high-power electronic converters. The product line emphasizes reliability and efficiency in energy conversion systems, supporting various industrial and mobility applications through modular design approaches.