IRG7CH73K10EF-R

IRG7CH73K10EF-R

  • Description:IGBT 1200V ULTRA FAST DIE
  • Series:-

SKU:152f8e844c03 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 1200V ULTRA FAST DIE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:1.6V @ 15V, 20A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:420 nC
  • Td (on/off) @ 25°C:105ns/45ns
  • Test Condition:600V, 75A, 5Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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IRG7CH73K10EF-R

Overview

The IRG7CH73K10EF-R is a single IGBT die manufactured by Infineon Technologies. It operates at a voltage rating of 1200V and is characterized as an ultra-fast switching device. The component is supplied in a bare die package format, designed for integration into custom power modules or discrete applications requiring high-voltage isolation. This specific part number represents the radiation-hardened variant within the IRG7CH73 series, engineered for robust performance in demanding environments.

Feature Summary

  • Ultra-fast switching characteristics optimized for high-frequency power conversion
  • Radiation-hardened design suitable for space and high-radiation industrial applications
  • Single N-channel IGBT configuration in a bare die form factor

Applications

  • Spacecraft DC-DC converters
  • High-reliability industrial power supplies
  • Radiation-tolerant motor drive systems

Procurement Notes

Verify the exact suffix 'R' corresponds to the radiation-hardened specification when sourcing. Confirm that the bare die package requires specialized mounting and wire-bonding infrastructure. Ensure compatibility with existing thermal management solutions for high-power density implementations.

Selection Notes

Select this component for applications requiring 1200V blocking capability with fast turn-off times. Consider the bare die format for custom module assembly rather than standard through-hole or surface-mount PCB mounting. Evaluate thermal resistance requirements based on the specific substrate material used in the final assembly.

Part Context

This part belongs to the IRG7CH73 series of high-performance IGBTs from Infineon. The series is known for combining low conduction losses with fast switching speeds. The 'R' suffix typically denotes specific qualification standards, such as radiation hardness, distinguishing it from standard commercial grade variants within the same electrical family.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Direct replacement should be verified against the specific radiation hardness and electrical parameter requirements of the original design.

IRG7CH73K10EF-RIRG7CH73K10EF-R

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