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The IRG7CH73K10EF-R is a single IGBT die manufactured by Infineon Technologies. It operates at a voltage rating of 1200V and is characterized as an ultra-fast switching device. The component is supplied in a bare die package format, designed for integration into custom power modules or discrete applications requiring high-voltage isolation. This specific part number represents the radiation-hardened variant within the IRG7CH73 series, engineered for robust performance in demanding environments.
Verify the exact suffix 'R' corresponds to the radiation-hardened specification when sourcing. Confirm that the bare die package requires specialized mounting and wire-bonding infrastructure. Ensure compatibility with existing thermal management solutions for high-power density implementations.
Select this component for applications requiring 1200V blocking capability with fast turn-off times. Consider the bare die format for custom module assembly rather than standard through-hole or surface-mount PCB mounting. Evaluate thermal resistance requirements based on the specific substrate material used in the final assembly.
This part belongs to the IRG7CH73 series of high-performance IGBTs from Infineon. The series is known for combining low conduction losses with fast switching speeds. The 'R' suffix typically denotes specific qualification standards, such as radiation hardness, distinguishing it from standard commercial grade variants within the same electrical family.
Public confirmed substitute part numbers are not available in the provided documentation. Direct replacement should be verified against the specific radiation hardness and electrical parameter requirements of the original design.