IRG7CH73K10EF

Overview

The IRG7CH73K10EF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, designed for high-power switching applications. This component utilizes a bare die package configuration, allowing for direct integration into custom power modules or hybrid assemblies. It features a maximum collector-emitter voltage rating of 1200 V and is characterized as an ultra-fast device to minimize switching losses. The part is specified under test conditions of 600 V, 75 A, with a gate resistance of 4.7 Ohms and a gate drive voltage of 15 V. Key electrical parameters include a gate charge of 360 nC, ensuring compatibility with standard gate drive requirements similar to the IRG7CH73K10E variant.

Feature Summary

• Ultra-fast switching characteristics optimized for reduced energy loss during transitions
• High voltage capability rated at 1200 V for robust operation in demanding circuits
• Bare die package format enabling flexible integration into custom power electronics architectures

Applications

• High-frequency AC-DC power conversion systems
• LLC resonant mode half-bridge controller implementations
• Server and PC power supply units requiring compact power stages

Procurement Notes

Verify that the procurement channel provides original manufacturer documentation, specifically the official datasheet for IRG7CH73K10EF. Confirm the package type is strictly a bare die, as this form factor requires specialized mounting and handling procedures distinct from standard leaded packages. Ensure the supplier guarantees authenticity to prevent counterfeit components, which may exhibit degraded switching performance or voltage ratings inconsistent with the 1200 V specification.

Selection Notes

Select the IRG7CH73K10EF when designing power stages that require a 1200 V blocking capability in a minimal footprint. The bare die format is suitable for engineers developing custom modules where thermal management and interconnection are handled internally. Consider the 360 nC gate charge when sizing gate drivers, as it dictates the drive current requirements. This component is appropriate for applications utilizing LLC resonant topologies or other high-efficiency converter designs operating within the specified temperature ranges.

Part Context

This IGBT belongs to Infineon's portfolio of discrete power semiconductors, often utilized in conjunction with controllers like the ICE2HS01G in advanced power conversion architectures. The bare die technology allows for higher packing density compared to traditional packages, supporting the miniaturization trends in modern server and industrial power supplies. Its ultra-fast nature complements soft-switching techniques common in high-frequency resonant converters.

Replacement Considerations

The IRG7CH73K10E is noted as having consistent gate charge characteristics, suggesting potential functional similarity in drive requirements. However, direct substitution must be validated against specific voltage and current derating curves. No other public substitute part numbers are confirmed in available documentation.