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Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IRG7PH35UD-EP is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by International Rectifier. It utilizes low VCE(on) trench IGBT technology and features a TO-247AD package. Key electrical parameters include a collector-to-emitter voltage (VCES) of 1200V, a continuous collector current (IC) of 50A at 25°C case temperature, and a maximum power dissipation of 180W. The device exhibits a typical saturation voltage (VCE(on)) of 1.9V at 20A and 25°C, with a gate threshold voltage ranging from 3.0V to 6.0V. Switching characteristics show a turn-off time (tf) of up to 105ns and a diode reverse recovery time (trr) of 105ns.
Feature Summary
- Low VCE(on) trench IGBT technology for reduced conduction losses
- Ultrafast soft recovery co-pack diode minimizing switching noise
- Square Reverse Bias Safe Operating Area (RBSOA) for rugged transient performance
- Positive VCE(on) temperature coefficient facilitating parallel operation
Applications
- Uninterruptible Power Supplies (UPS)
- Electric Arc Welding
- Solar Inverters
- Induction Heating Systems
Procurement Notes
Verify the specific ordering suffix to confirm the package type, as the datasheet distinguishes between TO-247AC (IRG7PH35UDPbF) and TO-247AD (IRG7PH35UD-EP). Ensure the component meets industrial market qualification standards. Confirm lead-free status and parameter distribution tightness requirements against project specifications before finalizing procurement.
Selection Notes
Select this component for applications requiring high voltage blocking capability and fast switching speeds. The positive temperature coefficient of VCE(on) supports reliable current sharing in parallel configurations. Evaluate thermal resistance values and junction temperature limits to ensure adequate heat sinking for the intended duty cycle and ambient conditions.
Part Context
This part belongs to the IRG7PH35U series of insulated gate bipolar transistors. It is designed for industrial applications where efficiency and reliability are critical. The EP suffix typically denotes specific qualification or packaging variations within the product line, distinct from standard commercial variants.
Replacement Considerations
Direct substitutes should match the 1200V rating, TO-247 package, and similar switching characteristics. Verify compatibility of gate drive requirements and thermal management solutions. Cross-reference with other IGBTs featuring ultrafast recovery diodes if exact pinout or parameter matches are unavailable.
FAQ
What is the maximum junction temperature for the IRG7PH35UD-EP?
The maximum operating junction temperature is 150°C.
Does the IRG7PH35UD-EP have a square RBSOA?
Yes, the device features a full square Reverse Bias Safe Operating Area (RBSOA).
What is the typical forward voltage drop of the integrated diode?
The typical diode forward voltage drop (VFM) is 2.8V at 20A and 25°C.
