ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH 1200V 50A TO-247AD
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 20A
- Power - Max：179 W
- Switching Energy：620µJ (off)
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：-/160ns
- Test Condition：600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
Download product information
Overview
The IRG7PH35UD1-EP is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, designed for high-efficiency power switching. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 50 A at 25°C. The device utilizes low VCE(on) trench IGBT technology to minimize conduction losses. Key electrical parameters include a maximum DC collector current of 50 A, a collector-emitter saturation voltage of 2.3 V, and a total power dissipation of 180 W within a TO-247AD package. The unit operates with a positive temperature coefficient for VCE(on) and includes an ultra-low forward voltage diode.
Feature Summary
- Trench IGBT technology providing low on-state voltage and reduced switching losses
- Ultra-low forward voltage diode optimized for soft switching applications
- Square Reverse Bias Safe Operating Area (RBSOA) ensuring rugged transient performance
- Positive VCE(on) temperature coefficient facilitating reliable parallel operation
Applications
- Induction heating systems
- Soft switching power converters
- High-frequency inverter circuits
Procurement Notes
Verify the manufacturer source document to confirm the specific suffix designation and lead-free status. Ensure the component matches the required TO-247AD package dimensions and pinout configuration for your circuit board layout. Cross-reference the datasheet revision date to validate the listed electrical characteristics against your design specifications.
Selection Notes
Select this component when designing circuits requiring high voltage blocking capability combined with low conduction losses. The positive temperature coefficient is critical for applications demanding stable current sharing among multiple devices connected in parallel. Verify that the thermal management solution can handle the specified 180 W power dissipation under worst-case operating conditions.
Part Context
This part belongs to the IRG7PH35UD series of insulated gate bipolar transistors. It is specifically engineered for applications where efficiency and reliability are paramount, such as induction heating. The EP suffix typically denotes enhanced product or specific qualification standards within the manufacturer's portfolio, distinguishing it from standard commercial variants.
Replacement Considerations
Direct substitutes may include other 1200V, 50A IGBTs in TO-247 packages with similar VCE(sat) and switching characteristics. Verify pin compatibility and thermal resistance values before substitution. Consult the manufacturer's official cross-reference list for confirmed equivalent parts.
