IRG7PH35UD1PBF

Overview

The IRG7PH35UD1PbF is an n-channel Insulated Gate Bipolar Transistor with an integrated ultra-low forward voltage diode, designed for induction heating and soft switching applications. It features a 1200V collector-to-emitter breakdown voltage and a nominal current of 20A. The device utilizes low VCE(on) trench IGBT technology to achieve high efficiency through reduced conduction and switching losses. Key electrical parameters include a maximum continuous collector current of 50A at 25°C case temperature, a typical saturation voltage of 1.9V at 20A, and a maximum power dissipation of 179W at 25°C. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Optimized for induction heating and soft switching applications
• High efficiency due to low VCE(on), low switching losses, and ultra-low VF diode
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation

Applications

• Induction heating systems
• Soft switching power converters
• High frequency resonant circuits

Procurement Notes

Verify the specific package variant required during procurement: TO-247AC (IRG7PH35UD1PbF) or TO-247AD (IRG7PH35UD1-EP). Confirm RoHS compliance status as indicated by the 'PbF' suffix. Ensure the ordering quantity matches the standard tube pack size of 25 units specified in the manufacturer documentation. Cross-reference the full part number to avoid confusion between the AC and AD package forms.

Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with low conduction losses. The positive temperature coefficient of VCE(on) facilitates safe parallel operation for higher current handling. Consider the thermal resistance values and the square RBSOA when calculating heat sinking requirements for high-power density designs. Verify that the gate drive voltage aligns with the specified 15V or 20V operating conditions for optimal performance.

Part Context

This device belongs to the IRG7PH series from Infineon Technologies (formerly International Rectifier). It represents a specialized class of IGBTs integrating a fast recovery diode with ultra-low forward voltage characteristics. The product line targets high-frequency power conversion where minimizing switching losses and improving overall system efficiency are critical design constraints.

Replacement Considerations

Direct replacements must match the 1200V rating, 20A nominal current, and TO-247 package form factor. Verify that alternative devices offer comparable switching loss characteristics and reverse bias safe operating area specifications to ensure circuit stability without redesigning the gate drive or snubber networks.