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Product Detailed Parameters
- Description：IGBT 1200V 45A TO-247AD
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：45 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 15A
- Power - Max：216 W
- Switching Energy：1mJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：135 nC
- Td (on/off) @ 25°C：50ns/240ns
- Test Condition：600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：120 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IRG7PH37K10D-EPBF is an Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by International Rectifier. It utilizes trench IGBT technology to achieve low conduction and switching losses. The device features a maximum junction temperature of 175 °C and a square Reverse Biased Safe Operating Area (RBSOA). Electrical specifications include a collector-emitter voltage of 1000 V and a continuous collector current of 37 A at 25 °C. It is housed in a TO-247AD package.
Feature Summary
- Trench IGBT technology for low VCE(sat) and reduced switching losses
- Integrated ultrafast soft recovery diode
- Square RBSOA for rugged transient performance
- Positive VCE(sat) temperature coefficient for parallel operation
Applications
- Uninterruptible Power Supplies (UPS)
- Solar inverters
- Induction heating systems
- Welding equipment
Procurement Notes
Verify the component authenticity through official manufacturer channels or authorized distributors. Confirm that the part number suffix matches the exact specification requirements. Check for RoHS compliance status and ensure the packaging type aligns with assembly needs. Validate the manufacturing date code to avoid obsolete stock.
Selection Notes
Select this component for high-efficiency applications requiring fast switching speeds. The integrated diode simplifies circuit design for half-bridge configurations. Ensure thermal management solutions support the 175 °C junction temperature limit. Verify gate drive compatibility with the specified input capacitance and threshold voltages.
Part Context
This device belongs to the IRG7PH series from International Rectifier, now part of Infineon Technologies. The series is designed for medium-power switching applications. The 'EP' suffix typically denotes enhanced performance or specific qualification standards. The TO-247AD package provides robust mechanical stability and efficient heat dissipation capabilities.
Replacement Considerations
Direct replacements may include other 1000V, 37A IGBTs with integrated diodes in TO-247 packages. Verify pinout compatibility and electrical parameters such as VCE(sat) and switching times. Consider thermal resistance values when substituting. Cross-reference with Infineon's official replacement guide for confirmed equivalents.
