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The IRG7PH42U-EP is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, formerly International Rectifier. It features a maximum continuous collector current of 90 A and a maximum collector-emitter voltage rating of 1200 V. The device is housed in a TO-247AD package with three pins for through-hole mounting. It supports switching frequencies ranging from 8 kHz to 30 kHz and has a maximum power dissipation capability of 385 W. The operational temperature range spans from -55 °C to +175 °C, with a maximum gate-emitter voltage of ±30 V.
Verify the manufacturer designation carefully, as Infineon acquired International Rectifier; datasheets may list either brand. Confirm the specific suffix '-EP' corresponds to the exact electrical characteristics required for your design. Ensure the TO-247AD footprint matches your PCB layout constraints before ordering.
Select this component when a single N-channel IGBT with 1200 V blocking capability and 90 A continuous current is needed. Consider the 8–30 kHz switching speed limit against your system's frequency requirements. Evaluate the TO-247AD package size and thermal resistance against your available heatsinking infrastructure.
This part belongs to the IRG7PH series of high-voltage IGBTs. It represents a transition period where products originally developed by International Rectifier are now managed under the Infineon portfolio. The 'EP' suffix typically denotes specific qualification or packaging variations within this product line.
Direct substitutes include other 1200 V, 90 A N-channel IGBTs in TO-247 packages such as the IRG7PH42UD. Verify pinout compatibility and thermal characteristics before swapping. Cross-referencing with newer Infineon generations may offer improved performance but requires re-evaluation of gate drive requirements.