IRG7PH42UD1PBF

Description：IGBT TRENCH 1200V 85A TO-247AC
Series：-

SKU:f435cffc5364 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 1200V 85A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：85 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
Power - Max：313 W
Switching Energy：1.21mJ (off)
Input Type：Standard
Gate Charge：180 nC
Td (on/off) @ 25°C：-/270ns
Test Condition：600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG7PH42UD1PBF

Overview

The IRG7PH42UD1PBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 85 A. The device utilizes a TO-247AC through-hole package with three pins. Key electrical parameters include a maximum power dissipation of 320 W, a maximum gate-emitter voltage of ±30 V, and an operating temperature range from -55 °C to +150 °C. The component dimensions are specified as 15.87 x 5.31 x 20.7 mm.

Feature Summary

Optimized for induction heating applications
Designed for soft switching operations
Integrated ultra-low forward voltage diode

Applications

Induction heating systems
Soft switching power converters

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status via manufacturer documentation. Ensure the TO-247AC package matches your PCB footprint requirements. Check for end-of-life notifications or recommended new designations in current Infineon catalogs before finalizing procurement plans.

Selection Notes

Select this component when high voltage isolation and low conduction losses are required in resonant circuits. The integrated diode simplifies circuit topology by eliminating external freewheeling components. Evaluate thermal management needs based on the 320 W dissipation rating and ensure adequate heatsinking for the TO-247AC package in enclosed environments.

Part Context

This IGBT belongs to the IRG7PH series, which is specifically engineered for high-frequency power conversion. Unlike standard hard-switching IGBTs, this model incorporates technology to minimize switching losses during resonant transitions. It serves as a critical active switch in high-efficiency induction cooktops and industrial heating equipment where rapid switching cycles are prevalent.