IRG7PH44K10DPBF

Description：IGBT 1200V 70A TO-247AC
Series：-

SKU:d1df6c049c5f Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 70A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 25A
Power - Max：320 W
Switching Energy：2.1mJ (on), 1.3mJ (off)
Input Type：Standard
Gate Charge：200 nC
Td (on/off) @ 25°C：75ns/315ns
Test Condition：600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：130 ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG7PH44K10DPBF

Overview

The IRG7PH44K10DPbF is a 1200 V, 70 A N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode. It utilizes Trench and Field-Stop technology to achieve low saturation voltage and switching losses. The device features a 150°C maximum junction temperature, 10 µs short-circuit withstand capability, and a square Reverse Bias Safe Operating Area (RBSOA). It is housed in a TO-247AC package.

Feature Summary

Low on-state voltage drop and switching energy losses for high efficiency
10 µs short-circuit safe operating area for robust fault protection
Square RBSOA enabling reliable operation under wide load conditions
Positive VCE(on) temperature coefficient facilitating parallel current sharing

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
High-frequency inverters

Procurement Notes

Verify the specific suffix against the datasheet: 'PbF' indicates lead-free compliance. Confirm the package variant matches the requirement; 'D' denotes the standard TO-247AC form factor. Ensure the ordering quantity aligns with the standard tube pack size of 25 units specified by the manufacturer.

Selection Notes

Select this component for applications requiring high voltage blocking and rugged transient performance. The 1200 V rating provides margin for inductive loads. The integrated diode simplifies half-bridge designs. Verify thermal management capabilities to maintain junction temperatures within the 150°C limit during continuous operation.

Part Context

This IGBT belongs to the PH series from Infineon Technologies, formerly International Rectifier. It represents a generation of devices optimized for medium-power industrial applications. The product line emphasizes reliability through enhanced short-circuit tolerance and improved thermal characteristics compared to earlier trench technologies.

Replacement Considerations

Direct substitutes include the IRG7PH44K10D-EPbF, which uses the TO-247AD package. Both variants share identical electrical specifications and pinouts. Verify that the alternative package fits the existing PCB footprint and mounting constraints before implementation.