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The IRG7PK35UD1-EPBF is an insulated gate bipolar transistor (IGBT) with an integrated ultra-low forward voltage diode, designed for induction heating and soft switching applications. It utilizes low VCE(on) trench IGBT technology to achieve low switching losses and high efficiency. The device features a square reverse bias safe operating area (RBSOA), a 1300Vpk repetitive transient capacity, and a positive VCE(on) temperature coefficient. It is supplied in a lead-free package.
Verify the specific suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm that the component meets the required automotive or industrial qualification standards as defined in the datasheet. Ensure compatibility with the intended thermal management solution given the power density of the device.
Select this component for designs requiring high efficiency in resonant or soft-switching topologies. The integrated diode characteristics are critical for minimizing conduction losses in freewheeling paths. Evaluate the thermal resistance requirements based on the expected junction temperature rise under load conditions.
This part belongs to the IRG7PH/IRG7PK series of IGBTs from International Rectifier, now part of Infineon Technologies. These devices are engineered specifically for high-frequency power conversion where low switching loss and robust transient handling are paramount. The EP suffix typically denotes an enhanced product or specific qualification level within the portfolio.
Cross-reference with IRG7PH35UD1-EP or IRG7PH35UD1MPBF for similar electrical characteristics. Verify pinout compatibility and thermal pad dimensions before substitution.