IRG7S313UTRLPBF

Description：IGBT TRENCH 330V 40A D2PAK
Series：-

SKU:d9ab42c396b0 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 330V 40A D2PAK
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：330 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.14V @ 15V, 60A
Power - Max：78 W
Switching Energy：-
Input Type：Standard
Gate Charge：33 nC
Td (on/off) @ 25°C：1ns/65ns
Test Condition：196V, 12A, 10Ohm
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRG7S313UTRLPBF

Overview

The IRG7S313UTRLPBF is a trench IGBT designed for Plasma Display Panel applications. It features advanced technology for low VCE(on) and EPULSE ratings, improving panel efficiency. Key parameters include a collector-emitter breakdown voltage of 330 V, continuous collector current of 20 A at 25°C, and repetitive peak current of 160 A. The device supports a maximum junction temperature of 150°C and utilizes a D2PAK package.

Feature Summary

Advanced trench IGBT technology
Optimized for sustain and energy recovery circuits in PDP applications
High repetitive peak current capability

Applications

Plasma Display Panels (PDP)
Sustain circuits
Energy recovery circuits

Procurement Notes

Verify the component matches the exact part number IRG7S313UTRLPBF. Confirm the datasheet corresponds to Infineon Technologies or International Rectifier specifications. Ensure the package type is D2PAK and the operating junction temperature range aligns with industrial requirements. Check for lead-free compliance markings on the physical device.

Selection Notes

Select this component for high-efficiency plasma display panel designs requiring robust pulse handling. Consider the 330 V breakdown voltage and 160 A peak current capability for circuit stress margins. Evaluate thermal management needs based on the 1.6 °C/W junction-to-case thermal resistance and 150°C maximum junction temperature limits.

Part Context

This IGBT belongs to the family of power switching devices optimized for display technologies. It integrates trench gate architecture to minimize conduction losses and energy per pulse. The device is engineered to withstand high repetitive peak currents while maintaining low saturation voltage characteristics essential for efficient panel operation.