IRG8P08N120KD-EPBF

$2.17

Description：IGBT 1200V 15A TO-247AD
Series：-

SKU:084819d75656 Category: Single IGBTs Brand: International Rectifier

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 15A TO-247AD
Series：-
Mfr：International Rectifier
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：15 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 5A
Power - Max：89 W
Switching Energy：300µJ (on), 300µJ (off)
Input Type：Standard
Gate Charge：45 nC
Td (on/off) @ 25°C：20ns/160ns
Test Condition：600V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr)：50 ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IRG8P08N120KD-EPBF

Overview

The IRG8P08N120KD-EPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. This component features an integrated ultrafast soft recovery anti-parallel diode and is housed in a TO-247AD surface-mount package with three terminals. It is designed for high-power switching applications requiring robust performance.

Feature Summary

Integrated ultrafast soft recovery anti-parallel diode
Trench field-stop technology for low conduction losses
High short-circuit withstand capability
RoHS compliant lead-free construction

Applications

Motor drive inverters
Switched-mode power supplies
Induction heating systems

Procurement Notes

Verify the manufacturer designation on the datasheet, as International Rectifier operations were acquired by Infineon. Confirm that the EPBF suffix indicates RoHS compliance and halogen-free status. Ensure the TO-247AD package dimensions match your thermal management requirements before procurement.

Selection Notes

Select this IGBT for circuits requiring high voltage blocking and efficient switching at moderate frequencies. The integrated diode simplifies design for inductive loads. Evaluate thermal resistance values to determine appropriate heatsinking for the expected continuous collector current and ambient operating conditions.

Part Context

This device belongs to the High Power IGBT family from International Rectifier. It utilizes trench field-stop technology to optimize the trade-off between conduction voltage drop and switching speed. The inclusion of the fast recovery diode makes it suitable for half-bridge configurations without external freewheeling components.