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The IRG8P25N120KDPBF is a single N-channel IGBT manufactured by International Rectifier, now part of Infineon Technologies. It features a planar gate technology and is housed in an insulated TO-247AD package with solderable terminals. The device provides a maximum collector-emitter voltage of 1200V and a continuous collector current of 36A at 25°C. Key electrical parameters include a typical on-state voltage of 2.9V at 36A and a switching time of 150ns. The component is designed for high-efficiency power conversion applications requiring robust performance.
Verify the manufacturer marking against Infineon's official product portfolio to confirm authenticity. Ensure the ordering suffix matches the exact specification requirements. Request RoHS compliance documentation from authorized distributors. Inspect the physical package for damage before integration into the circuit design.
Select this component when a 1200V rating is required for high-voltage isolation. The 36A current capacity suits moderate power levels where low conduction losses are critical. Evaluate the thermal resistance of the heatsink interface to maintain junction temperature within safe operating limits during continuous operation.
This IGBT belongs to the P25 family of fast-switching devices from International Rectifier. The series utilizes advanced silicon processing to balance conduction and switching losses. The TO-247AD form factor allows for direct mounting onto standard heat sinks, facilitating its use in industrial power electronics modules.
Cross-reference with other 1200V, 36A N-channel IGBTs in the TO-247AD package. Verify pinout compatibility and thermal resistance values before substitution. Check datasheet specifications for Vce(sat) and switching times to ensure equivalent performance in the target application.