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Product Detailed Parameters
- Description：IGBT 1200V 60A TO-247AD
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 25A
- Power - Max：305 W
- Switching Energy：1.6mJ (on), 1.8mJ (off)
- Input Type：Standard
- Gate Charge：240 nC
- Td (on/off) @ 25°C：40ns/245ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：80 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IRG8P40N120KD-EPBF is a N-channel IGBT from Infineon Technologies (formerly International Rectifier), housed in a TO-247AD package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 25°C, reducing to 20 A at 100°C. The device incorporates TRENCHSTOP™ technology for optimized switching performance and low conduction losses.
Feature Summary
- Utilizes Infineon's TRENCHSTOP™ technology for enhanced efficiency
- Integrated anti-parallel fast recovery diode
- Designed for high-power industrial applications
Applications
- Motor drives
- Switch-mode power supplies
- Induction heating
Procurement Notes
Verify the manufacturer designation as Infineon Technologies, noting that International Rectifier was acquired. Confirm the specific suffix 'KD' indicates the inclusion of an integrated anti-parallel diode. Ensure the 'EPBF' suffix confirms lead-free and RoHS compliance status before procurement.
Selection Notes
Select this component for designs requiring robust 1200 V blocking capability with moderate current handling up to 40 A. Consider the thermal resistance characteristics inherent to the TO-247AD package for heat dissipation requirements. Evaluate the switching speed trade-offs associated with the integrated diode for your specific frequency application.
Part Context
This part belongs to the IRG8 series of IGBTs, representing a generation of devices utilizing advanced trench gate technology. It serves as a discrete power switch solution within the broader portfolio of Infineon's power management and control products, bridging the gap between lower-power MOSFETs and higher-power modules.
Replacement Considerations
Consult official cross-reference lists for equivalents such as the IRG8P40N120KDPBF or other TRENCHSTOP™ 5 series variants with matching voltage and current ratings.
