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The IRG8P60N120KDPBF is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a maximum collector-to-emitter voltage of 1200 V and a continuous collector current rating of 100 A at 25°C case temperature. The device operates within a junction temperature range of -40°C to +150°C and offers a maximum power dissipation of 420 W at 25°C. It is available in the TO-247AC package.
Verify the specific package variant required during procurement, as the base model corresponds to the TO-247AC form factor. Confirm that the ordering suffix matches the exact physical dimensions and pin spacing needed for the target PCB footprint. Ensure compliance with lead-free and RoHS standards if environmental regulations apply to the final assembly process.
Select this component when designing circuits requiring high voltage blocking capability combined with robust short-circuit tolerance. The positive temperature coefficient of the saturation voltage makes it suitable for parallel configurations where balanced current distribution is critical. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under expected load conditions.
This IGBT belongs to the IRG8P series from Infineon Technologies, designed for medium to high-power switching applications. The product line emphasizes efficiency and reliability in industrial environments. The integration of an ultrafast soft recovery diode simplifies circuit design by eliminating the need for external freewheeling diodes in many topologies.
IRG8P60N120KD-EPbF
The device supports a short circuit duration of 10 microseconds at a junction temperature of 150°C.
Yes, it includes an integrated ultrafast soft recovery diode.
The continuous gate-to-emitter voltage rating is ±30 V.