IRG8P60N120KDPBF

IRG8P60N120KDPBF

  • Description:IGBT 1200V 100A TO-247AC
  • Series:-

SKU:6945b7c0286a Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 1200V 100A TO-247AC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 40A
  • Power - Max:420 W
  • Switching Energy:2.8mJ (on), 2.3mJ (off)
  • Input Type:Standard
  • Gate Charge:345 nC
  • Td (on/off) @ 25°C:40ns/240ns
  • Test Condition:600V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr):210 ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Grade:-
  • Qualification:-

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IRG8P60N120KDPBF

Overview

The IRG8P60N120KDPBF is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a maximum collector-to-emitter voltage of 1200 V and a continuous collector current rating of 100 A at 25°C case temperature. The device operates within a junction temperature range of -40°C to +150°C and offers a maximum power dissipation of 420 W at 25°C. It is available in the TO-247AC package.

Feature Summary

  • Features benchmark low saturation voltage for high efficiency in motor drive applications
  • Includes a 10µs short circuit safe operating area to increase protection scheme margins
  • Positive saturation voltage temperature coefficient ensures excellent current sharing in parallel operation
  • Square reverse bias safe operating area and high clamped inductive load current rating provide rugged transient performance

Applications

  • Industrial Motor Drive
  • Uninterruptible Power Supply (UPS)
  • Solar Inverters
  • Welding

Procurement Notes

Verify the specific package variant required during procurement, as the base model corresponds to the TO-247AC form factor. Confirm that the ordering suffix matches the exact physical dimensions and pin spacing needed for the target PCB footprint. Ensure compliance with lead-free and RoHS standards if environmental regulations apply to the final assembly process.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capability combined with robust short-circuit tolerance. The positive temperature coefficient of the saturation voltage makes it suitable for parallel configurations where balanced current distribution is critical. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under expected load conditions.

Part Context

This IGBT belongs to the IRG8P series from Infineon Technologies, designed for medium to high-power switching applications. The product line emphasizes efficiency and reliability in industrial environments. The integration of an ultrafast soft recovery diode simplifies circuit design by eliminating the need for external freewheeling diodes in many topologies.

Replacement Considerations

IRG8P60N120KD-EPbF

FAQ

What is the maximum short circuit duration the device can withstand?

The device supports a short circuit duration of 10 microseconds at a junction temperature of 150°C.

Does the IRG8P60N120KDPBF include an integrated diode?

Yes, it includes an integrated ultrafast soft recovery diode.

What is the recommended gate-to-emitter voltage range?

The continuous gate-to-emitter voltage rating is ±30 V.

IRG8P60N120KDPBFIRG8P60N120KDPBF

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