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Product Detailed Parameters
- Description：IGBT NPT 600V 22A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：22 A
- Current - Collector Pulsed (Icm)：44 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 10A
- Power - Max：156 W
- Switching Energy：140µJ (on), 250µJ (off)
- Input Type：Standard
- Gate Charge：38 nC
- Td (on/off) @ 25°C：30ns/230ns
- Test Condition：400V, 10A, 47Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGB10B60KDPbF is a single N-channel Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) non-punch-through IGBT technology and features a TO-262 (D2Pak) surface-mount package. The device supports a collector-to-emitter voltage of 600V and a continuous collector current of 35A at 25°C case temperature. It offers a maximum power dissipation of 156W at 25°C and operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a typical saturation voltage of 1.8V at 10A and a short-circuit capability exceeding 10μs.
Feature Summary
- Incorporates low VCE(on) non-punch-through IGBT technology for optimized conduction performance.
- Features ultrasoft diode reverse recovery characteristics to minimize electromagnetic interference.
- Provides a full square Reverse Bias Safe Operating Area (RBSOA) for robust transient handling.
- Ensures excellent current sharing in parallel operation due to a positive VCE(on) temperature coefficient.
Applications
- Motor control circuits requiring high efficiency and rugged transient performance.
- Industrial switching applications utilizing the integrated ultrafast soft recovery diode.
- Power conversion systems benefiting from low EMI generation during switching transitions.
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required lead-free specification and package variant. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under intended operating conditions.
Selection Notes
Select this component for applications demanding low switching losses and high reliability in industrial environments. Evaluate the trade-off between the low saturation voltage and the integrated diode's reverse recovery characteristics against specific circuit requirements. Consider the TO-262 package dimensions for PCB layout constraints and thermal dissipation needs.
Part Context
This device belongs to the IRG/B/S/SL10B60KDPbF family, which includes variants in different packages such as TO-220AB and TO-262. The family shares common electrical specifications derived from the same underlying silicon technology, differing primarily in physical footprint and mounting style while maintaining identical performance metrics.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Verify compatibility regarding pinout configuration, thermal resistance parameters, and absolute maximum ratings before implementing any alternative components in existing designs.
