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The IRGB14C40LPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter voltage of 430 V and a continuous collector current rating of 20 A. The device operates with a collector-emitter saturation voltage of 1.4 V and supports a maximum gate-emitter voltage range of -10 V to +10 V. Packaged in TO-220AB, it dissipates up to 125 W of power.
Verify the specific package variant upon ordering, as sources indicate availability in both TO-220AB and TO-247AC configurations. Confirm that the suffix 'PbF' denotes lead-free compliance. Ensure the selected component matches the required thermal and electrical specifications for the target circuit design before finalizing procurement.
Select this IGBT for applications demanding rugged performance and logic-level compatibility. The integrated clamping features enhance reliability against voltage transients. Consider the 1.4 V saturation voltage for efficiency calculations. Verify that the TO-220AB package meets the mechanical constraints of the intended assembly.
This component belongs to the family of high-performance IGBTs optimized for robust industrial use. It utilizes trench-gate field-stop technology to balance switching speed and conduction losses. The part is designed to withstand harsh operating conditions while maintaining stable performance in power electronics circuits.
The IRGS14C40L and IRGSL14C40L are documented variants within the same product line featuring similar clamping and logic-level characteristics. Verify pinout compatibility and thermal resistance differences when substituting these parts.