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The IRGB15B60KDPbF is a single N-channel Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes Non Punch Through IGBT technology for low VCE(on) and features a TO-262 (D2Pak) surface-mount package. Key electrical ratings include a collector-emitter voltage of 600V, a continuous collector current of 31A at 25°C case temperature, and a maximum power dissipation of 208W at 25°C. The device supports a junction temperature range from -55°C to +150°C and offers 10µs short-circuit capability.
Verify component authenticity through authorized distribution channels due to potential counterfeiting risks. Confirm that the specific TO-262 package variant matches your PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under expected operating loads. Check for RoHS compliance documentation if required by local regulations.
Select this component when a surface-mount solution is preferred over through-hole packages like the IRGS15B60KDPbF. Consider the 600V rating and 31A current capacity relative to system load requirements. Evaluate the thermal performance based on the D2Pak package's heat dissipation characteristics compared to alternative form factors.
This part belongs to the IRG(S/SL)15B60KD family of high-performance medium-voltage IGBT modules. It shares core technological attributes with other variants such as the IRGS15B60KDPbF (TO-220AB) and IRGSL15B60KDPbF, differing primarily in the physical mounting configuration and package outline dimensions.
Direct functional substitutes within the same series include the IRGS15B60KDPbF and IRGSL15B60KDPbF. These alternatives share identical electrical specifications but utilize different package types (TO-220AB and TO-262 respectively). Verify mechanical fit before substitution.
The device is rated for a short-circuit withstand time of 10 microseconds.
Yes, it includes an integrated ultrafast soft recovery diode.
The maximum operating junction temperature is +150°C.