IRGB15B60KDPBF

IRGB15B60KDPBF

  • Description:IGBT NPT 600V 31A TO-220AB
  • Series:-

SKU:4a4e890195f0 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 31A TO-220AB
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):31 A
  • Current - Collector Pulsed (Icm):62 A
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 15A
  • Power - Max:208 W
  • Switching Energy:220µJ (on), 340µJ (off)
  • Input Type:Standard
  • Gate Charge:56 nC
  • Td (on/off) @ 25°C:34ns/184ns
  • Test Condition:400V, 15A, 22Ohm, 15V
  • Reverse Recovery Time (trr):92 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

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IRGB15B60KDPBF

Overview

The IRGB15B60KDPbF is a single N-channel Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes Non Punch Through IGBT technology for low VCE(on) and features a TO-262 (D2Pak) surface-mount package. Key electrical ratings include a collector-emitter voltage of 600V, a continuous collector current of 31A at 25°C case temperature, and a maximum power dissipation of 208W at 25°C. The device supports a junction temperature range from -55°C to +150°C and offers 10µs short-circuit capability.

Feature Summary

  • Integrates an ultrafast soft recovery diode with ultrasoft reverse recovery characteristics to minimize electromagnetic interference.
  • Employs Non Punch Through IGBT technology providing a positive VCE(on) temperature coefficient for excellent current sharing in parallel operation.
  • Features a square Reverse Bias Safe Operating Area (RBSOA) and rugged transient performance capabilities.

Applications

  • Motor control systems requiring benchmark efficiency.
  • High-frequency switching applications utilizing the integrated fast recovery diode.
  • Industrial power conversion circuits demanding rugged transient performance.

Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeiting risks. Confirm that the specific TO-262 package variant matches your PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under expected operating loads. Check for RoHS compliance documentation if required by local regulations.

Selection Notes

Select this component when a surface-mount solution is preferred over through-hole packages like the IRGS15B60KDPbF. Consider the 600V rating and 31A current capacity relative to system load requirements. Evaluate the thermal performance based on the D2Pak package's heat dissipation characteristics compared to alternative form factors.

Part Context

This part belongs to the IRG(S/SL)15B60KD family of high-performance medium-voltage IGBT modules. It shares core technological attributes with other variants such as the IRGS15B60KDPbF (TO-220AB) and IRGSL15B60KDPbF, differing primarily in the physical mounting configuration and package outline dimensions.

Replacement Considerations

Direct functional substitutes within the same series include the IRGS15B60KDPbF and IRGSL15B60KDPbF. These alternatives share identical electrical specifications but utilize different package types (TO-220AB and TO-262 respectively). Verify mechanical fit before substitution.

FAQ

What is the short-circuit withstand time for the IRGB15B60KDPbF?

The device is rated for a short-circuit withstand time of 10 microseconds.

Does the IRGB15B60KDPbF have a built-in diode?

Yes, it includes an integrated ultrafast soft recovery diode.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

IRGB15B60KDPBFIRGB15B60KDPBF

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