IRGB20B60PD1PBF

Description：IGBT NPT 600V 40A TO-220AB
Series：-

SKU:ea49a2f8eebd Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 40A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：80 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 20A
Power - Max：215 W
Switching Energy：95µJ (on), 100µJ (off)
Input Type：Standard
Gate Charge：68 nC
Td (on/off) @ 25°C：20ns/115ns
Test Condition：390V, 13A, 10Ohm, 15V
Reverse Recovery Time (trr)：28 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRGB20B60PD1PBF

Overview

The IRGB20B60PD1PbF is a WARP2 series N-channel IGBT with an integrated HEXFRED ultrafast soft-recovery diode, rated for 600 V collector-emitter voltage and packaged in TO-220AB. It utilizes NPT technology to provide a positive temperature coefficient for safe parallel operation. The device features low saturation voltage (typical 2.05 V at 13 A) and minimal tail current. Key electrical parameters include a maximum continuous collector current of 40 A at 25°C case temperature, a typical gate threshold voltage of 4.0 V, and total switching losses up to 285 µJ at 25°C. The co-packaged diode exhibits a forward voltage drop of 1.5 V at 4 A.

Feature Summary

NPT technology ensures a positive temperature coefficient for stable parallel operation in high-current applications.
Integrated HEXFRED ultrafast soft-recovery diode minimizes reverse recovery charge and associated switching losses.
Optimized internal structure reduces parasitic capacitances and tail current for enhanced high-frequency performance.

Applications

Telecom and server switch-mode power supplies
Power factor correction and zero-voltage switching circuits
Uninterruptible power supplies
Consumer electronics power supplies

Procurement Notes

Verify the component matches the exact part number IRGB20B60PD1PbF. Confirm the package type is TO-220AB and that it includes the lead-free suffix 'PbF'. Ensure the supplier provides documentation confirming the WARP2 series designation and HEXFRED diode integration. Cross-reference datasheet specifications against your specific thermal and electrical requirements before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring high switching frequencies up to 150 kHz. The positive temperature coefficient makes it suitable for paralleling multiple units to increase current handling capacity. Consider the integrated diode's soft recovery characteristics to reduce electromagnetic interference and voltage spikes in hard-switching topologies like PFC or ZVS converters.

Part Context

This device belongs to the WARP2 series of insulated gate bipolar transistors manufactured by Infineon Technologies (formerly International Rectifier). The series combines IGBT technology with ultrafast recovery diodes in a single package to optimize system efficiency and reduce component count in power conversion applications.

Replacement Considerations

Direct substitutes within the same family include IRGB20B60PD1. Verify pinout compatibility and thermal resistance values when replacing components in existing designs.

FAQ

What is the maximum operating junction temperature for the IRGB20B60PD1PbF?

The maximum operating junction temperature range extends up to +150 °C.

How does the NPT technology benefit parallel operation?

NPT technology provides a positive temperature coefficient for the collector-emitter saturation voltage, allowing multiple devices to share current evenly without thermal runaway during parallel operation.