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The IRGB30B60KPbF is a single N-channel insulated gate bipolar transistor (IGBT) manufactured by Infineon Technologies. It utilizes Non Punch Through IGBT technology and features a TO-220AB package for through-hole mounting. The device supports a collector-to-emitter voltage of 600 V and a continuous collector current of 78 A at 25°C case temperature, or 50 A at 100°C. It has a maximum power dissipation of 370 W at 25°C and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a typical saturation voltage of 1.95 V at 25°C and a short-circuit capability exceeding 10 µs.
Verify the exact ordering suffix against official documentation to confirm lead-free status and specific package variant. Confirm that the component meets all required automotive or industrial qualification standards if applicable to the design. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.
Select this component for designs requiring high voltage handling and robust transient performance. Consider the positive temperature coefficient for improved current sharing in parallel configurations. Evaluate the switching losses and gate charge requirements against the driver capabilities to ensure optimal efficiency and thermal performance within the system constraints.
This part belongs to the IRGS30B60K family, which includes variants in D2Pak and TO-262 packages. It is designed as a high-performance power switch suitable for demanding industrial applications. The TO-220AB package provides reliable through-hole mounting options for higher power dissipation scenarios compared to surface-mount alternatives.
IRGS30B60KPbF
The device has a short-circuit capability greater than 10 µs at TJ=150°C.
Yes, it features a positive VCE(on) temperature coefficient, which aids in current sharing during parallel operation.