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Product Detailed Parameters
- Description：IGBT TRENCH 600V 8A TO-220AB
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：8:00 AM
- Current - Collector Pulsed (Icm)：16 A
- Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 4A
- Power - Max：56 W
- Switching Energy：35µJ (on), 75µJ (off)
- Input Type：Standard
- Gate Charge：13 nC
- Td (on/off) @ 25°C：25ns/65ns
- Test Condition：400V, 4A, 100Ohm, 15V
- Reverse Recovery Time (trr)：55 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGB4059DPBF is an N-channel Insulated Gate Bipolar Transistor manufactured by Infineon Technologies, formerly International Rectifier. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 8 A at 25 °C. The device utilizes TrenchSTOP technology for optimized switching performance. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a fall time of 20 ns, and a maximum junction temperature of 175 °C. It is housed in a lead-free TO-220AB package with three terminals.
Feature Summary
- Incorporates TrenchSTOP technology to achieve low conduction losses and fast switching characteristics.
- Features ultra-fast soft recovery integrated anti-parallel diode to minimize switching losses and electromagnetic interference.
- Designed for high thermal stability with a maximum operating junction temperature of 175 °C.
Applications
- High-frequency power supplies
- Motor control applications
- Uninterruptible power systems (UPS)
- DC-DC converters
Procurement Notes
Verify the manufacturer designation as Infineon Technologies, as International Rectifier was acquired. Confirm the specific suffix DPBF indicates a lead-free TO-220AB package compliant with RoHS standards. Ensure the component matches the single N-channel IGBT configuration with built-in diode before integration into circuit designs.
Selection Notes
Select this component for applications requiring moderate current handling up to 8 A with a 600 V blocking capability. The TO-220AB through-hole package facilitates manual assembly and standard heatsinking. Consider the 20 ns fall time for switching frequency requirements within the typical range for hard-switched topologies.
Part Context
This part belongs to the IRGBxx series of TrenchSTOP IGBTs from Infineon. It represents the legacy International Rectifier product line now managed under Infineon's portfolio. The TO-220AB form factor is a standard industry package for discrete power transistors requiring robust mechanical mounting.
Replacement Considerations
Direct cross-references should be sought among Infineon's IRGBxxDPBF series with matching 600V/8A ratings. Verify pinout compatibility and saturation voltage specifications when substituting with other manufacturers' TO-220AB IGBTs to ensure thermal and electrical equivalence.
FAQ
What is the maximum junction temperature for the IRGB4059DPBF?
The maximum operating junction temperature is 175 °C.
Does the IRGB4059DPBF include an integrated diode?
Yes, it is configured as a single IGBT with a built-in ultra-fast soft recovery diode.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (V(BR)CES) is rated at 600 V.
