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The IRGB4060DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, formerly International Rectifier. It utilizes TRENCHSTOP technology and is housed in a TO-220AB three-pin through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 36 A at 25°C. Key electrical parameters include a saturation voltage of 1.9 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 187 W. It operates within a temperature range of -40°C to +175°C.
Verify the manufacturer status as the component is listed as obsolete or end-of-life by major distributors. Confirm availability from secondary market suppliers if production continuity is required. Ensure the datasheet revision matches the specific batch requirements for design-in validation.
Select this component when a 600V rated IGBT with moderate current handling is needed for through-hole applications. Compare the 36 A continuous current rating against thermal management capabilities. Verify that the 1.9 V saturation voltage meets efficiency targets compared to newer generation devices.
This part belongs to the Infineon TRENCHSTOP IGBT family, representing legacy components from the International Rectifier acquisition. It serves as a replacement for older discrete switching solutions in industrial equipment where through-hole reliability is prioritized over surface-mount density.
Direct cross-references may be limited due to the obsolete status. Evaluate modern equivalents from Infineon's current IGBT portfolios that offer similar voltage ratings and package compatibility. Verify pinout alignment before substitution.