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Product Detailed Parameters
- Description：IGBT TRENCH 600V 48A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：48 A
- Current - Collector Pulsed (Icm)：72 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 24A
- Power - Max：250 W
- Switching Energy：115µJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：41ns/104ns
- Test Condition：400V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr)：89 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The Infineon IRGB4062DPbF is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery Co-Pak diode, housed in a TO-220AB package. It utilizes low VCE(on) Trench IGBT technology to achieve high efficiency and low switching losses. The device supports a collector-to-emitter voltage of 600V and a continuous collector current of 24A at TC=100°C. Key electrical parameters include a maximum junction temperature of 175°C, a short-circuit safe operating area of 5μs, and a typical saturation voltage of 1.65V at IC=24A.
Feature Summary
- Low VCE(on) Trench IGBT Technology
- Ultrafast Soft Recovery Co-Pak Diode
- Positive VCE(on) Temperature Coefficient
- Square RBSOA
Applications
- Motor Control
- Switch Mode Power Supplies (SMPS)
- High Frequency Inverters
Procurement Notes
Verify the specific ordering suffix against the official datasheet to confirm the package type and lead-free status. Ensure that the component matches the required thermal resistance values for your application's heat dissipation needs. Confirm compliance with RoHS standards and check for any specific handling guidelines regarding the TO-220AB package during assembly.
Selection Notes
Select this component for applications requiring high efficiency and rugged transient performance. The positive temperature coefficient of VCE(on) facilitates excellent current sharing in parallel operation. Consider the device's low switching losses and wide operating frequency range when designing for high-performance power conversion systems.
Part Context
This part belongs to Infineon's industrial IGBT portfolio, designed for robust performance in demanding power electronics environments. It complements other high-voltage switching devices by offering a balance of low conduction and switching losses. The integration of the fast recovery diode simplifies circuit design for hard-switching applications.
Replacement Considerations
Consult official replacement guides for verified substitutes. Ensure any alternative device matches the 600V rating, 24A current capability, and TO-220AB package dimensions. Verify compatibility with existing gate drive requirements and thermal management solutions.
FAQ
What is the maximum short-circuit time for the IRGB4062DPbF?
The device supports a short-circuit time of at least 5 microseconds under specified conditions.
Does the IRGB4062DPbF have a negative or positive temperature coefficient for VCE(on)?
It features a positive VCE(on) temperature coefficient, which aids in parallel operation.
What type of diode is integrated with the IGBT in this component?
It includes an ultrafast soft recovery Co-Pak diode.
