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The IRGB4610DPbF is a single n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes TrenchStop technology to achieve low VCE(ON) and switching losses. The device features a TO-220AB package for through-hole mounting. Key electrical parameters include a collector-to-emitter breakdown voltage of 600V, a continuous collector current of 24A at 25°C case temperature, and a maximum power dissipation of 77W at 25°C. The component supports a maximum junction temperature of 175°C.
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Select this component when designing circuits requiring high efficiency across a wide range of switching frequencies. The integrated ultrafast diode simplifies design by eliminating external freewheeling requirements. Consider the thermal resistance characteristics and the need for adequate heatsinking to maintain junction temperatures within the specified limits during high-current operations.
This device belongs to the IRGx4610 family of IGBTs produced by International Rectifier, now part of Infineon Technologies. The family includes variants with different packages, such as the D2PAK (IRGS4610DPbF) and D-PAK (IRGR4610DPbF). All variants share identical internal die specifications and electrical characteristics, differing only in the physical housing and mounting configuration.
Public confirmed substitute part numbers: IRGS4610DPBF, IRGR4610DPBF.
The device supports a short circuit time of 5 microseconds, enabling the implementation of short circuit protection schemes.
It features a positive VCE(ON) temperature coefficient and tight parameter distribution, which ensures excellent current sharing when multiple units are operated in parallel.
The component integrates an ultrafast soft recovery diode, which minimizes reverse recovery losses and electromagnetic interference.