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The IRGB4615DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It is housed in a TO-220AB three-pin package designed for through-hole mounting. The device features a collector-emitter voltage rating of 600 V and a continuous collector current capacity of 36 A at 25°C. It incorporates an ultrafast soft recovery anti-parallel diode integrated within the module structure.
Verify the manufacturer designation on official datasheets, as International Rectifier was acquired by Infineon Technologies. Confirm that the specific suffix 'DPBF' corresponds to the required lead-free packaging and RoHS compliance standards mandated by your project specifications before finalizing procurement orders.
Select this component when a 600 V blocking capability and 36 A continuous current handling are required in a standard through-hole configuration. Ensure the thermal management design accommodates the specified power dissipation limits. Verify that the gate drive requirements align with the standard logic-level thresholds typical for this IGBT family.
This component belongs to the IRGB series of insulated gate bipolar transistors produced by International Rectifier. The series is characterized by high efficiency and reliability in medium-power switching applications. The TO-220AB package provides a standardized footprint compatible with common heatsinking solutions used in industrial electronics manufacturing.
Consult official cross-reference documentation from Infineon Technologies for verified substitute part numbers. Do not assume functional equivalence with other 600 V IGBTs without verifying pinout compatibility and electrical parameter alignment.