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The IRGB4620DPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a TO-220AB package and supports a collector-emitter voltage of 600V. The device provides a continuous collector current of 32A at 25°C case temperature and 20A at 100°C. Typical saturation voltage is 1.55V at 12A. It operates within a junction temperature range of -40°C to +175°C.
Verify the exact ordering suffix against official manufacturer documentation to confirm package type and lead-free status. Confirm that the component meets RoHS compliance requirements for your specific application environment. Ensure thermal management solutions align with the specified maximum junction temperature limits during operation.
Select this component based on its 600V rating and 32A continuous current capability at standard temperatures. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation for the intended duty cycle. Consider the positive temperature coefficient for potential parallel operation requirements in higher power designs.
This part belongs to the IRGx4620D family of IGBTs from Infineon Technologies. It shares core electrical specifications with variants such as the IRGP4620DPbF (TO-247AC), IRGS4620DPbF (D2Pak), and IRGIB4620DPbF (TO-220AB Full-Pak). The primary distinction lies in the physical package form factor rather than internal semiconductor architecture.
Direct replacements include IRGP4620DPbF, IRGS4620DPbF, and IRGIB4620DPbF. These parts share identical electrical parameters but utilize different packages (TO-247AC, D2Pak, TO-220AB Full-Pak respectively). Verify mechanical footprint compatibility before substitution.