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Product Detailed Parameters
- Description：IGBT NPT 600V 13A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：26 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 5A
- Power - Max：90 W
- Switching Energy：110µJ (on), 135µJ (off)
- Input Type：Standard
- Gate Charge：18.2 nC
- Td (on/off) @ 25°C：25ns/215ns
- Test Condition：400V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGB6B60KPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 13 A at 25°C. The device utilizes a TO-220AB through-hole package with three pins. It operates within a temperature range from -55 °C to +150 °C, with a maximum gate-emitter voltage of ±20 V.
Feature Summary
- Single N-channel IGBT configuration for discrete switching applications
- Through-hole mounting capability via TO-220AB package
- High thermal stability supporting operation up to 150 °C junction temperature
Applications
- General purpose power switching circuits
- Motor drive inverter legs
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the complete part number including the suffix PBF against official Infineon documentation to confirm lead-free compliance and RoHS status. Ensure the ordering code matches the specific TO-220AB variant required for your assembly process. Cross-reference datasheet revision dates to confirm parameter consistency before finalizing procurement specifications.
Selection Notes
Select this component when a robust 600 V rated switch is needed for moderate current levels around 13 A. The TO-220AB package facilitates easy integration into standard printed circuit board layouts requiring through-hole technology. Consider the thermal resistance characteristics relative to your heatsinking strategy to maintain safe operating temperatures under load.
Part Context
This IGBT belongs to Infineon's discrete power semiconductor portfolio designed for medium-power conversion tasks. It complements other devices in the family offering varying current ratings and voltage classes. The TO-220AB form factor provides a balance between electrical performance and mechanical ease of installation for industrial and consumer electronics manufacturers.
Replacement Considerations
Consult official cross-reference lists for direct replacements. Verify that any substitute maintains identical pinout compatibility and meets or exceeds the 600 V / 13 A specifications without altering the thermal interface requirements.
