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Product Detailed Parameters
- Description：IGBT NPT 600V 28A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：28 A
- Current - Collector Pulsed (Icm)：26 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 8A
- Power - Max：167 W
- Switching Energy：160µJ (on), 160µJ (off)
- Input Type：Standard
- Gate Charge：18.2 nC
- Td (on/off) @ 25°C：23ns/140ns
- Test Condition：400V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGB8B60KPBF is a single N-channel IGBT in a TO-220AB package. It supports through-hole mounting with three pins. The device handles a maximum collector-emitter voltage of 600 V and a continuous collector current of 28 A. The gate-emitter voltage rating is ±20 V. Operating temperatures range from -55 °C to +175 °C. Physical dimensions are 10.54 x 4.69 x 8.77 mm.
Feature Summary
- Single N-channel configuration for discrete switching applications
- High thermal tolerance supporting operation up to +175 °C
- Robust 600 V blocking capability for industrial power stages
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the complete part number including the suffix PBF, which indicates lead-free status. Confirm the TO-220AB package type matches the required footprint. Ensure the 600 V rating aligns with the specific circuit voltage requirements. Check datasheet specifications for saturation voltage and switching times against system constraints before finalizing procurement.
Selection Notes
Select this component when a robust, high-voltage single switch is needed for through-hole assembly. The 28 A current rating suits moderate power levels. Verify that the drive circuit can handle the required gate charge. Consider thermal management solutions given the +175 °C junction temperature limit. Compare total cost of ownership against alternative packages if space is constrained.
Part Context
This IGBT belongs to Infineon's standard discrete power transistor portfolio. It utilizes planar technology for reliable performance. The component is designed for general-purpose power switching. It complements other devices in the same voltage class. The product line focuses on durability and consistent electrical characteristics.
Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains the TO-220AB package form factor. Ensure equivalent switching speeds and saturation voltages to avoid redesigning the gate drive or thermal interface.
