IRGBC20U

Overview

The IRGBC20U is an UltraFast Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, originally from International Rectifier. It features a TO-220AB package with n-channel configuration and collector connection. Key electrical parameters include a collector-to-emitter voltage of 600V, continuous collector current of 13A at 25°C case temperature, and maximum power dissipation of 60W. The device exhibits a saturation voltage of ≤3.0V at VGE=15V and IC=6.5A, with switching losses including tail losses optimized for high frequencies over 5kHz.

Feature Summary

• UltraFast switching design optimized for high operating frequencies exceeding 5kHz in hard switching applications
• Integrated switching-loss rating that accounts for all tail losses to improve efficiency
• High usable current density compared to comparable bipolar transistors while maintaining simple MOSFET-like gate drive requirements

Applications

• High-frequency power conversion circuits
• Motor drive inverters
• Industrial power supplies

Procurement Notes

Verify the manufacturer origin as the component was originally produced by International Rectifier before acquisition by Infineon. Confirm the specific package type is TO-220AB and check for any RoHS compliance status variations across production batches. Ensure thermal management solutions match the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select this component for applications requiring high-frequency operation above 5kHz where low switching losses are critical. Consider the 600V breakdown voltage and 13A continuous current capability for medium-power designs. Evaluate the thermal performance based on the junction-to-case resistance and ensure adequate heat sinking for the intended duty cycle and ambient conditions.

Part Context

This IGBT belongs to the UltraFast series designed for efficient high-frequency switching. It combines the high input impedance of MOSFETs with the low conduction loss of bipolar transistors. The TO-220AB package facilitates through-hole mounting, making it suitable for prototyping and industrial equipment where robust mechanical connections are required.

Replacement Considerations

Check for direct equivalents within the same UltraFast series or other manufacturers offering similar 600V, 13A TO-220AB IGBTs. Verify pinout compatibility and thermal characteristics before substitution.