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Product Detailed Parameters
- Description：IGBT 600V 34A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 18A
- Power - Max：100 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGBC30S is a standard speed N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-to-emitter breakdown voltage of 600V and a continuous collector current rating of 34A at a case temperature of 25°C, decreasing to 18A at 100°C. The device has a maximum collector-to-emitter saturation voltage of 2.2V at 15V gate drive and 18A collector current. It utilizes a TO-220AB package with a junction-to-case thermal resistance of 1.2 °C/W and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Optimized for line frequency operation up to 400 Hz
- Switching-loss rating includes all tail losses
- Higher usable current densities than comparable bipolar transistors
- Simpler gate-drive requirements similar to power MOSFETs
Applications
- High-voltage, high-current applications
- Line frequency power conversion systems
- Industrial motor drives
- Power supplies operating at frequencies up to 400 Hz
Procurement Notes
Verify the specific datasheet revision and ordering information directly from Infineon or authorized distributors. Confirm that the TO-220AB package dimensions and mounting torque specifications align with your mechanical design constraints. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under expected operating conditions.
Selection Notes
Select this component when designing circuits requiring robust performance at line frequencies up to 400 Hz. Consider the trade-off between conduction losses indicated by the VCE(sat) ratings and switching losses defined by the total switching loss parameters. Evaluate the derating curves for continuous collector current against your maximum expected case temperatures to ensure reliable operation within the safe operating area.
Part Context
This IGBT belongs to the standard speed family from International Rectifier, now part of Infineon Technologies. It is designed to replace older discrete bipolar transistors in high-power applications, offering improved current density and easier drive characteristics. The device is commonly used in industrial and commercial power electronics where moderate switching speeds and high current handling are required.
Replacement Considerations
The IRG4BC30 is documented as a replacement for the IRGBC30K and IRGBC30M devices. Verify electrical compatibility and pinout alignment before substituting.
