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Product Detailed Parameters
- Description：IGBT 600V 23A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：23 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 12A
- Power - Max：100 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGBC30U is an UltraFast Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a 600V collector-to-emitter voltage rating and operates as an N-channel device. The component supports a continuous collector current of 23A at 25°C case temperature, with a maximum saturation voltage of 3.0V at 15V gate drive. Designed for high-frequency applications exceeding 5kHz, it utilizes Generation 4 IGBT technology to optimize switching performance.
Feature Summary
- Optimized for high operating frequencies over 5kHz in hard switching applications
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency
- Switching-loss rating includes all tail losses for accurate thermal management
Applications
- High frequency motor drives
- Resonant mode power supplies
- Hard switching inverter circuits
Procurement Notes
Verify the specific ordering suffix against official datasheets to confirm package type and tape-and-reel specifications. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Confirm RoHS compliance status if required by local regulations before finalizing orders.
Selection Notes
Select this component for designs requiring optimized switching speeds above 5kHz. Evaluate thermal resistance values relative to the intended heat sink configuration. Consider the total switching loss characteristics when designing for high-efficiency power conversion systems requiring precise gate drive control.
Part Context
This IGBT belongs to the UltraFast series from International Rectifier, now part of Infineon Technologies. The product line focuses on high-voltage, high-current applications benefiting from MOSFET-like gate drive simplicity. It represents Generation 4 technology designed to improve efficiency over previous iterations.
Replacement Considerations
Consult official replacement guides for equivalent Generation 4 IGBTs. Verify pinout compatibility and thermal resistance parameters before substituting. Ensure the alternative device meets the 600V voltage rating and current handling requirements of the original circuit design.
FAQ
Does the switching-loss rating include tail losses?
Yes, the specified switching-loss rating explicitly includes all tail losses.
What is the maximum junction temperature?
The maximum operating junction temperature is +150°C.
Is this device suitable for resonant mode operation?
Yes, the device is optimized for high operating frequencies, supporting operation greater than 200kHz in resonant mode.
