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The IRGBC30UD2 is a co-packaged Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode. It features a collector-to-emitter voltage of 600 V and a continuous collector current of 23 A at 25°C case temperature. The device operates within a junction temperature range of -55°C to +150°C. Switching losses include tail losses, with total switching loss typically ranging from 1.5 mJ to 2.5 mJ. The package is TO-220AB.
Verify the component origin as Infineon Technologies, noting its lineage from International Rectifier. Confirm the specific ordering suffix matches the datasheet requirements. Ensure the package type is TO-220AB and check for any RoHS compliance documentation relevant to the manufacturing batch.
Select this component for applications requiring high-voltage switching with integrated freewheeling capabilities. Consider the thermal resistance characteristics and the maximum power dissipation limits when designing heat sinks. Evaluate the gate drive requirements against the specified threshold voltage and total gate charge parameters.
This part belongs to the UltraFast CoPack IGBT series, extending International Rectifier's established IGBT line. It combines the convenience of an IGBT with an ultrafast recovery diode, providing substantial benefits for high-voltage and high-current applications compared to discrete solutions.
Check for direct replacements within the Infineon portfolio that share the same pinout and electrical ratings. Verify compatibility with existing PCB footprints and thermal management strategies before substitution.