IRGBF20F

Overview

The IRGBF20F is a fast-speed N-channel Insulated Gate Bipolar Transistor (IGBT) in a TO-220AB package. It features a collector-to-emitter voltage of 900V and continuous collector currents of 9.0A at 25°C case temperature and 5.3A at 100°C. The saturation voltage is ≤4.3V at VGE=15V and IC=5.3A. Switching losses include tail losses, with total switching loss reaching 1.10mJ at 150°C. Thermal resistance from junction to case is 2.1°C/W.

Feature Summary

• Optimized for medium operating frequencies between 1 and 10kHz
• Switching-loss rating includes all tail losses
• Higher usable current densities than comparable bipolar transistors
• Simpler gate-drive requirements similar to power MOSFETs

Applications

• High-voltage, high-current applications
• Medium frequency power conversion systems
• Industrial motor drives
• Inverter circuits

Procurement Notes

Verify the component marking matches the IRGBF20F designation exactly. Confirm the package type is TO-220AB. Check datasheet revisions for any updates to thermal or electrical characteristics. Ensure the supplier provides original manufacturer documentation to validate authenticity and performance specifications.

Selection Notes

Select this IGBT for applications requiring 900V blocking capability and moderate current handling up to 9.0A. Consider the thermal resistance and power dissipation limits when designing heat sinks. Evaluate gate drive requirements against the specified threshold voltage and charge parameters. Ensure operating frequencies align with the optimized 1 to 10kHz range for efficient performance.

Part Context

This component belongs to the family of Insulated Gate Bipolar Transistors produced by Infineon Technologies (formerly International Rectifier). These devices combine the high-efficiency switching of MOSFETs with the high-current handling of bipolar transistors. The IRGBF20F specifically targets medium-frequency applications where low switching losses and robust voltage ratings are critical.

Replacement Considerations

Consult official replacement lists for equivalent 900V, TO-220AB IGBTs. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference datasheets for matching electrical parameters such as VCES, IC, and switching speeds.

FAQ

Does the switching loss rating include tail losses?

Yes, the switching-loss rating for the IRGBF20F explicitly includes all tail losses.

What is the recommended operating frequency range?

The device is optimized for medium operating frequencies between 1 kHz and 10 kHz.

What is the maximum collector-to-emitter voltage?

The maximum collector-to-emitter voltage (VCES) is 900V.