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Product Detailed Parameters
- Description：IGBT NPT 1200V 100A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 100A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The IRGC100B120KB is a die-level n-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes GEN5 Non Punch Through (NPT) technology and is designed for motor control applications. The component features a collector-to-emitter breakdown voltage of 1200V and a nominal collector current of 100A. At 25°C, the typical collector-to-emitter saturation voltage is 2.3V at 100A with a gate-emitter voltage of 15V. The device supports a short circuit capability of 10µs and exhibits a positive VCE(on) temperature coefficient.
Feature Summary
- Utilizes GEN5 Non Punch Through (NPT) technology to achieve benchmark efficiency in motor control applications.
- Features rugged transient performance and excellent current sharing characteristics when operated in parallel configurations.
- Provides a square Reverse Biased Safe Operating Area (RBSOA) alongside a 10µs short circuit capability.
Applications
- Motor Control Systems
- Industrial Inverters
- Servo Drive Amplifiers
Procurement Notes
This product is supplied as sawn wafers on film rather than packaged discrete components. Verify that your assembly line meets Class 10,000 clean room standards and strictly adheres to ESD safety protocols. Contact the manufacturer directly for Known Good Die (KGD) options or specific screening requirements, as standard packaging guarantees do not apply to this wafer form factor.
Selection Notes
Select this component only if your manufacturing process includes custom power module assembly capabilities. The datasheet notes that die products may not perform identically to standard packaged equivalents due to processing restrictions. Ensure your design accounts for the specific mechanical dimensions and recommended die attach temperatures to maintain electrical integrity.
Part Context
The IRGC100B120KB belongs to the IGBT family from International Rectifier, now part of Infineon Technologies. It represents a specialized semiconductor die intended for integration into larger power modules. Unlike standard surface-mount or through-hole packages, this item requires direct mounting and bonding within a customer-defined enclosure structure.
Replacement Considerations
No public substitute part numbers are documented for this specific die configuration. Replacement requires sourcing identical dies from the manufacturer or redesigning the power module using alternative packaged IGBTs that match the 1200V/100A specifications.
FAQ
What is the maximum short circuit duration for this IGBT?
The device is rated for a short circuit capability of 10 microseconds.
Does this component have a positive or negative temperature coefficient?
It features a positive VCE(on) temperature coefficient, which facilitates excellent current sharing in parallel operation.
Is this product sold as a packaged discrete component?
No, it is sold as a die in wafer form (sawn wafers on film) and requires custom assembly.
