IRGC100B120UB

Description：IGBT NPT 1200V 100A DIE
Series：-

SKU:82985acf4938 Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 100A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：100 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 100A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Download product information

IRGC100B120UB

Overview

The IRGC100B120UB is a die-level Ultra Fast IGBT manufactured using GEN5 Non Punch Through (NPT) technology on a 150mm wafer. It features a collector-to-emitter breakdown voltage of 1200V and a nominal continuous collector current of 100A at 25°C. The typical saturation voltage is 3.2V, with a maximum of 3.5V under specified test conditions. The device supports a short circuit capability of 10µs and exhibits a positive temperature coefficient for VCE(on).

Feature Summary

Utilizes GEN5 Non Punch Through technology for optimized switching performance.
Features ultra-fast characteristics suitable for high-frequency applications above 20kHz.
Provides excellent current sharing capabilities when operated in parallel configurations.

Applications

Welding equipment power stages
Uninterruptible Power Supply (UPS) systems
Induction heating units

Procurement Notes

Verify the specific procurement status directly with the manufacturer or authorized distributors, as this component may be subject to availability constraints. Confirm that the received product matches the exact part number and wafer lot specifications required for your assembly process. Ensure all handling procedures strictly adhere to ESD safety protocols and clean room standards to prevent contamination or degradation of the semiconductor die before integration.

Selection Notes

Select this component when designing circuits requiring high efficiency above 20kHz and rugged performance under short-circuit conditions. Consider its square RBSOA and positive temperature coefficient for reliable parallel operation. Evaluate the mechanical parameters, including dimensions and metal composition, to ensure compatibility with your specific die attach and packaging requirements.

Part Context

This component belongs to the Ultra Fast IGBT family from Infineon Technologies (formerly International Rectifier). It represents a die-level offering rather than a packaged module, intended for customers performing their own assembly. The product leverages mature manufacturing processes on 150mm wafers to deliver benchmark efficiency for demanding industrial power electronics applications.

Replacement Considerations

Consult the manufacturer for alternative die options if this specific part number is unavailable. Verify that any substitute maintains equivalent electrical characteristics, particularly the 1200V rating and 100A current capacity, while ensuring mechanical compatibility with existing assembly lines.