IRGC100B60UB

IRGC100B60UB

  • Description:IGBT NPT 600V 100A DIE
  • Series:-

SKU:37eb1966b657 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 100A DIE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 100A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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IRGC100B60UB

Overview

The IRGC100B60UB is a Gen 5 IGBT discrete component manufactured by Infineon Technologies. It features a maximum collector-emitter voltage (VCEmax) of 600 V and a continuous collector current (ICmax) of 100 A. The device has a maximum saturation voltage (VCE(sat)) of 2.9 V, with a gate-emitter threshold voltage range of 3.5 V to 5.5 V. Turn-on time (tr) is specified at 100 ns and turn-off time (tf) at 85 ns. Operating temperature ranges from -55 °C to 150 °C.

Feature Summary

  • High-speed switching capability for efficient power conversion
  • Robust thermal performance suitable for demanding industrial environments
  • Optimized for high-power applications requiring reliable operation

Applications

  • Industrial motor drives
  • Welding equipment
  • Uninterruptible power supplies (UPS)
  • Photovoltaic inverters

Procurement Notes

Verify the exact part number against official Infineon documentation to ensure compatibility with your specific application requirements. Confirm that the datasheet version matches your design specifications. Check for any specific handling or storage instructions provided in the manufacturer's guidelines before procurement.

Selection Notes

Consider the operating frequency and thermal management requirements when selecting this IGBT. Ensure the gate drive circuitry can accommodate the specified threshold voltage range. Evaluate the system's voltage and current stresses against the device's maximum ratings to guarantee long-term reliability under varying load conditions.

Part Context

This component belongs to Infineon's Gen 5 IGBT family, designed for high-efficiency power switching. It utilizes TRENCHSTOP technology to balance conduction and switching losses. The product line targets industrial applications where robustness and performance are critical, offering a solution for medium to high-power systems.

Replacement Considerations

IRGC100B60KB

FAQ

What is the maximum operating temperature for the IRGC100B60UB?

The maximum operating temperature is 150 °C.

Does the IRGC100B60UB include an anti-parallel diode?

No, this is a discrete IGBT without an integrated anti-parallel diode.

What is the typical turn-off time for this device?

The turn-off time (tf) is specified as 85 ns.

IRGC100B60UBIRGC100B60UB

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