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The IRGC100B60UB is a Gen 5 IGBT discrete component manufactured by Infineon Technologies. It features a maximum collector-emitter voltage (VCEmax) of 600 V and a continuous collector current (ICmax) of 100 A. The device has a maximum saturation voltage (VCE(sat)) of 2.9 V, with a gate-emitter threshold voltage range of 3.5 V to 5.5 V. Turn-on time (tr) is specified at 100 ns and turn-off time (tf) at 85 ns. Operating temperature ranges from -55 °C to 150 °C.
Verify the exact part number against official Infineon documentation to ensure compatibility with your specific application requirements. Confirm that the datasheet version matches your design specifications. Check for any specific handling or storage instructions provided in the manufacturer's guidelines before procurement.
Consider the operating frequency and thermal management requirements when selecting this IGBT. Ensure the gate drive circuitry can accommodate the specified threshold voltage range. Evaluate the system's voltage and current stresses against the device's maximum ratings to guarantee long-term reliability under varying load conditions.
This component belongs to Infineon's Gen 5 IGBT family, designed for high-efficiency power switching. It utilizes TRENCHSTOP technology to balance conduction and switching losses. The product line targets industrial applications where robustness and performance are critical, offering a solution for medium to high-power systems.
IRGC100B60KB
The maximum operating temperature is 150 °C.
No, this is a discrete IGBT without an integrated anti-parallel diode.
The turn-off time (tf) is specified as 85 ns.