IRGC50B60PB

Description：IGBT CHIP
Series：-

SKU:c1132308e7d7 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT CHIP
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 10A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IRGC50B60PB

Overview

The IRGC50B60PB is a Gen 5 IGBT bare die with a maximum collector-emitter voltage of 600 V and a continuous collector current of 50 A. It features a saturation voltage of 1.65 V, a gate threshold voltage range of 3.0 V to 5.0 V, and turn-on/turn-off times of 10 ns and 11 ns respectively. The component operates within a temperature range of -55 °C to 150 °C.

Feature Summary

Utilizes Gen 5 IGBT technology for optimized switching performance
Designed as a bare die for integration into custom power modules
Features a low saturation voltage for efficient conduction

Applications

Industrial motor drives
High-efficiency power supplies
Welding equipment inverters

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical tolerances and packaging specifications. Confirm that the bare die form factor aligns with your module assembly capabilities and thermal management requirements before procurement.

Selection Notes

Select this component when a 600 V rating and 50 A continuous current are required in a bare die format. Ensure the application can accommodate the specified 150 °C maximum junction temperature and matches the 10 ns switching speed characteristics for optimal system efficiency.

Part Context

This part belongs to Infineon's Gen 5 IGBT family, designed for high-performance industrial applications. As a bare die, it serves as a core semiconductor element intended for mounting onto substrates within larger power electronic assemblies rather than standalone discrete use.