IRGC75B120UB

Description：IGBT NPT 1200V 75A DIE
Series：-

SKU:f1492daec9e9 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 75A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 75A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IRGC75B120UB

Overview

The IRGC75B120UB is a Gen 5 IGBT bare die from Infineon Technologies, rated at 1200 V and 75 A. It features a maximum collector-emitter saturation voltage of 3.5 V, with a gate threshold voltage range of 4.5 V to 6.0 V. The device exhibits turn-on and turn-off times of 90 ns and 120 ns, respectively. Designed for industrial applications, it operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

High-voltage capability suitable for demanding power conversion environments
Robust thermal performance allowing operation up to 150 °C
Optimized switching characteristics for efficient energy management

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
Welding equipment
General-purpose inverters

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm specific binning or testing parameters. Ensure compatibility with your assembly process by reviewing the datasheet's mechanical specifications and soldering recommendations before placing orders.

Selection Notes

Select this component when a 1200 V rating and 75 A continuous current are required in a bare die format. Consider its 3.5 V saturation voltage and switching speeds for efficiency targets. Evaluate thermal management requirements carefully due to the exposed die structure and specified operating limits.

Part Context

This part belongs to Infineon's Gen 5 IGBT family, designed for high-power industrial applications. It utilizes TRENCHSTOP technology to balance conduction and switching losses. As a bare die, it requires custom packaging or integration into larger modules by the system designer.