IRGC75B60KB

Description：IGBT NPT 600V 75A DIE
Series：-

SKU:2f4fc36254dd Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 75A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IRGC75B60KB

Overview

The IRGC75B60KB is a Gen 5 IGBT discrete component manufactured by Infineon Technologies. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (IC) of 75 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage (VCE(sat)) of 2.1 V, with a gate-emitter threshold voltage ranging from 3.5 V to 5.5 V. Turn-on time (tr) is specified at 165 ns, while turn-off time (tf) is 125 ns. Operating temperature ranges from -55°C to 150°C.

Feature Summary

Utilizes TRENCHSTOP™ technology for optimized switching performance
Designed for high-efficiency industrial power applications
Features robust thermal operation up to 150°C

Applications

Industrial motor drives
Welding equipment
Power supplies

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm package type and specific electrical tolerances. Confirm availability status as product lifecycles may change. Ensure compatibility with existing system thermal management requirements before procurement.

Selection Notes

Select this component for applications requiring a balance between conduction losses and switching speed within the 600 V class. Consider the 75 A current rating relative to peak load demands and verify that the 150°C junction temperature limit aligns with the target enclosure design constraints.

Part Context

This part belongs to the Gen 5 IGBT family, representing an evolution in Infineon's discrete power semiconductor portfolio. It is positioned alongside other TRENCHSTOP™ variants designed to improve efficiency in medium-power industrial converters and inverters compared to previous generations.